MACOM Announces New Family of High-Performance GaN Power Transistors for Wireless Basestations
Sampling to customers today, MACOM's new MAGb series of power transistors offer world-leading GaN performance at LDMOS like cost structures
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This product series delivers power efficiency improvement of up to 10% and package size reduction greater than 15% over legacy LDMOS offerings. Based on linear Gen 4 technology, the MAGb is easy to linearize and correct with digital-pre-distortion (DPD) schemes compared to other GaN technologies. (Photo: Business Wire)
The MAGb series of power transistors target all cellular bands within the 1.8 GHz to 3.8 GHz frequency range. Initial entries in the product series include single-ended transistors providing up to 400 W peak power in small packages, dual-transistors and single-package Doherty configuration providing up to 700 W peak power in both symmetric and asymmetric power options. This product series delivers power efficiency improvement of up to 10% and package size reduction greater than 15% over legacy LDMOS offerings. Based on linear Gen 4 technology, the MAGb is easy to linearize and correct with digital-pre-distortion (DPD) schemes compared to other GaN technologies.
The power transistors in the MAGb family cover much wider bandwidth than LDMOS, reducing the number of parts needed to cover the major cellular bands. The new product family delivers these advantages while simplifying the Doherty implementation over LDMOS-based transistors and maintaining over 200 MHz of video bandwidth - The MAGB-101822-120B0S is the first product in this family and covers 500 MHz of RF bandwidth between 1.7GHz to 2.2GHz. It is housed in a small AC-400 ceramic package and delivers over 160 W of peak power and a peak efficiency of 74% with fundamental tuning only and linear gain over 19 dB across the 500 MHz band.
Second in this series is the MAGB-101822-240B0S, which has double the output power of the MAGB-101822-120B0S with peak power over 320 W, 19 dB of linear gain and peak efficiency over 72% with fundamental tuning only across the 500 MHz RF bandwidth, housed in the AC-780 ceramic package. The peak efficiency of both parts can be further improved to well above 80% when the devices are presented with the proper harmonic terminations.
This new series unleashes the efficiency, size and broadband advantages of MACOM's Gen4 GaN. It enables wireless carriers to deploy the latest LTE releases and significantly reduce operating expenses at highly competitive price points, with a scalable supply chain combined with MACOM's best in class applications and design support team with decades of experience.
"We believe that Gen4 GaN positions MACOM at the vanguard of a
transformative evolution in basestation power amplifiers, enabling a
price/performance breakthrough that can't be achieved with alternative
semiconductor technologies," said
To schedule a private demonstration of MACOM's MAGb
products at
Select products in MACOM's new MAGb series of GaN power transistors are sampling to qualified customers today. For more information about MACOM's GaN solutions for wireless infrastructure, visit www.macom.com/wirelessinfra.
Special Note Regarding Forward-Looking Statements:
This press release contains forward-looking statements based on MACOM management's beliefs and assumptions and on information currently available to our management. Forward-looking statements include, among others, information concerning future activities or trends, business strategies, industry conditions, market opportunities and all statements that are not historical facts, and generally may be identified by terms such as "anticipates," "believes," "could," "estimates," "expects," "intends," "may," "plans," "potential," "predicts," "projects," "seeks," "should," "will," "would" or similar expressions and the negatives of those terms.
Forward-looking statements contained in this press release reflect
MACOM's current views about future events and are subject to risks,
uncertainties, assumptions and changes in circumstances that may cause
those events or our actual activities or results to differ materially
from those expressed in any forward-looking statement. Although MACOM
believes that the expectations reflected in the forward-looking
statements are reasonable, it cannot and does not guarantee future
events, results, actions, levels of activity, performance or
achievements. MACOM cannot assure security of chain of supply for its
GaN on Si power transistors, that it will win any particular amount of
business in the GaN on Si power transistor market or translate such wins
into revenue in any particular period or that it will be able to achieve
its anticipated price and performance targets for its
basestation-optimized GaN on Si power transistors. Readers are cautioned
not to place undue reliance on these forward-looking statements. A
number of important factors could cause actual results to differ
materially from those indicated by the forward-looking statements,
including those factors described in "Risk Factors" in MACOM's filings
with the
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Any express or implied statements in MACOM product announcements are not meant as warranties or warrantable specifications of any kind. The only warranty MACOM may offer with respect to any product sale is one contained in a written purchase agreement between MACOM and the purchaser concerning such sale and signed by a duly authorized MACOM employee, or, to the extent MACOM's purchase order acknowledgment so indicates, the limited warranty contained in MACOM's standard Terms and Conditions for Quotation or Sale, a copy of which may be found at: www.macom.com/support.
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