MACOM Achieves Up To 79% Efficiency for Wireless Basestations with New High-power, Plastic-packaged GaN Power Transistors
High performance, 320 W and 160 W GaN power transistors in rugged, low-cost plastic packaging widen the price/performance advantage versus legacy LDMOS offerings
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Plastic-packaged MAGb power transistors deliver power efficiency up to 79% - an improvement of up to 10% compared to LDMOS offerings - with only fundamental tuning across the 400 MHz RF bandwidth, and with linear gain of up to 20 dB. These transistors provide a compelling alternative to ceramic-packaged devices without compromising RF performance or reliability - thermal behavior is improved by 10% compared to ceramic-packaged MAGb offerings. (Photo: Business Wire)
The new plastic TO-272-packaged MAGb-101822-240B0P and MAGb-101822-120B0P power transistors provide 320 W and 160 W output peak power, respectively, in the load-pull system with fundamental tuning only, and cover all cellular bands and power levels within the 1.8 - 2.2 GHz frequency range. These transistors' ability to operate over 400 MHz of bandwidth precludes the need to use multiple LDMOS-based products, further optimizing cost and design efficiencies.
Plastic-packaged MAGb power transistors deliver power efficiency up to 79% - an improvement of up to 10% compared to LDMOS offerings - with only fundamental tuning across the 400 MHz RF bandwidth, and with linear gain of up to 20 dB. These transistors provide a compelling alternative to ceramic-packaged devices without compromising RF performance or reliability - thermal behavior is improved by 10% compared to ceramic-packaged MAGb offerings.
These power transistors enable the implementation of a simple symmetric Doherty amplifier design while maintaining excellent RF performance compared to lesser performing and complex asymmetric Doherty topologies imposed by LDMOS-based transistors. With MACOM's MAGb series transistors, Doherty amplifier implementations show the same level of DPD friendliness as LDMOS-based solutions. MACOM will host joint demonstrations with Xilinix's DPD solution at IMS 2016.
"DPD is critical to increase the efficiency of power amplifiers for 4G
and 5G basestation applications and has a significant impact on network
operators' operating expenses and capital expenditures," said
"Our collaboration with Xilinx demonstrates the linearity and ease of
correction of our MAGb, especially with signals that are
known to be challenging to correct using GaN-based solutions like
multi-carrier GSM and TDD-LTE signals," said
MACOM's Gen4 GaN-based MAGb series of power transistors
enable wireless carriers to deploy the latest LTE releases and
significantly reduce system operating expenses at highly competitive
price points, with a scalable supply chain combined with MACOM's highly
experienced applications and design support team. To schedule a private
demonstration of MACOM's MAGb products at IMS 2016,
Select products in MACOM's MAGb series of GaN power transistors are sampling to qualified customers today. For more information about MACOM's GaN solutions for wireless infrastructure, visit www.macom.com/wirelessinfra.
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