M/A-COM Technology Solutions Showcases Innovative GaN in Plastic Transistors at European Microwave Week, 2012
Packaged in a convenient 3x6mm plastic package, the wideband transistors are well suited for pulsed radar, TDMA amplifiers, ultra wideband power amplifiers, and high power Satcomm applications.
"By leveraging the thermal, bandwidth, and PAE capabilities of GaN as well as smallest size packaging techniques, we have created a range of rugged and reliable high voltage, unmatched transistors with exceptional electrical and thermal performance," said
M/A-COM Tech's GaN in Plastic Transistors are wide band enabled power modules based on innovative GaN on SiC technology. This enables the widest RF frequency capability, reliable high voltage operation, and lowest cost using "TRUE SMT"™ plastic packaging technology. In addition, using RF/DC Life testing, M/A-COM Tech's GaN in Plastic Transistors have demonstrated outstanding reliability with a 100 year lifetime at 225°C.
In keeping with low cost manufacturing techniques, the devices can be mounted on a printed circuit board via a ground/thermal array. Use of an internal stress buffer technology allows the die to be reliably operated at up to 200 degree channel temperature. The small 3x6mm package size and excellent RF performance makes it an ideal replacement for more costly flange or metal backed module components.
Production quantities and samples of M/A-COM Tech's GaN in Plastic Transistors are available from stock. Final datasheets and additional product information can be obtained from the M/A-COM Tech's GaN microsite at: www.macomtech.com/gan
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